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RN1707JE(TE85L,F)

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RN1707JE(TE85L,F)

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 100mA

Product Status : Active

Transistor Type : 2 NPN - Pre-Biased (Dual) (Emitter Coupled)

Frequency - Transition : 250MHz

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series : -

Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) : 50V

Supplier Device Package : ESV

Resistor - Base (R1) : 10kOhms

Mfr : Toshiba Semiconductor and Storage

Resistor - Emitter Base (R2) : 47kOhms

Current - Collector Cutoff (Max) : 500nA

Power - Max : 100mW

Package / Case : SOT-553

DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V

Base Product Number : RN1707

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Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

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