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IRFD220PBF

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IRFD220PBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : 4-DIP (0.300", 7.62mm)

Gate Charge (Qg) (Max) @ Vgs : 14 nC @ 10 V

Rds On (Max) @ Id, Vgs : 800mOhm @ 480mA, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Bulk

Drain to Source Voltage (Vdss) : 200 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 260 pF @ 25 V

Mounting Type : Through Hole

Series : -

Supplier Device Package : 4-HVMDIP

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 800mA (Ta)

Power Dissipation (Max) : 1W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFD220

Description : MOSFET N-CH 200V 800MA 4DIP

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N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

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